Advance Technical Information
TrenchMV TM
IXTF280N055T
V DSS
= 55 V
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
I D25
R DS(on)
= 160 A
≤ 4.0 m Ω
Symbol
Test Conditions
Maximum Ratings
ISOPLUS i4-Pak TM (5-lead) (IXTF)
V DSS
V DGR
V GSM
I D25
I L
I DM
I AR
T J = 25°C to 175°C
T J = 25°C to 175°C; R GS = 1 M Ω
Transient
T C = 25°C
Package Current Limit, RMS (75 A per lead)
T C = 25°C, pulse width limited by T JM
T C = 25°C
55
55
± 20
160
150
600
40
V
V
V
A
A
A
A
E AS
dv/dt
T C = 25°C
I S ≤ I DM , di/dt ≤ 100 A/ms, V DD ≤ V DSS
T J ≤ 175°C, R G = 3.3 Ω
1.5
3
J
V/ns
G
S
S
D
D
P D
T C = 25°C
200
W
G = Gate
S = Source
D = Drain
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
°C
°C
°C
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
T L
T SOLD
V ISOL
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I ISOL < 1 mA, RMS 2500
300
260
V
°C
°C
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
F C
Weight
Mounting force
20..120/4.5..25
6
N/lb.
g
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications
Automotive
BV DSS
V GS(th)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
55
2.0
4.0
V
V
- Motor Drives
- High Side Switch
- 12V Battery
I GSS
I DSS
R DS(on)
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V T J = 150°C
V GS = 10 V, I D = 50 A, Notes 1, 2
± 200 nA
5 μ A
250 μ A
4.0 m Ω
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS99686 (01/07)
? 2007 IXYS CORPORATION All rights reserved
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